Datasheet Details
| Part number | 2SC3144 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.64 KB |
| Description | NPN Transistor |
| Download | 2SC3144 Download (PDF) |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SC3144 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.64 KB |
| Description | NPN Transistor |
| Download | 2SC3144 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 1.5A ·Wide Area of Safe Operation ·Complement to Type 2SA1258 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed drivers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 1.75 W 20 125 ℃ Tstg Storage Temperature Range -55~125 ℃ 2SC3144 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA;
IE= 0 VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3144 | PNP/NPN Transistors | Sanyo Semicon Device |
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2SC3144 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3146 | NPN Transistor |
| 2SC3148 | NPN Transistor |
| 2SC3110 | Silicon Power Transistor |
| 2SC3150 | NPN Transistor |
| 2SC3151 | NPN Transistor |
| 2SC3152 | NPN Transistor |
| 2SC3153 | NPN Transistor |
| 2SC3156 | NPN Transistor |
| 2SC3157 | NPN Transistor |
| 2SC3158 | NPN Transistor |