Datasheet Details
| Part number | 2SC3148 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.56 KB |
| Description | NPN Transistor |
| Download | 2SC3148 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor 2SC3148.
| Part number | 2SC3148 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.56 KB |
| Description | NPN Transistor |
| Download | 2SC3148 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3148 | NPN Transistor | Toshiba Semiconductor |
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2SC3148 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3144 | NPN Transistor |
| 2SC3146 | NPN Transistor |
| 2SC3110 | Silicon Power Transistor |
| 2SC3150 | NPN Transistor |
| 2SC3151 | NPN Transistor |
| 2SC3152 | NPN Transistor |
| 2SC3153 | NPN Transistor |
| 2SC3156 | NPN Transistor |
| 2SC3157 | NPN Transistor |
| 2SC3158 | NPN Transistor |