Datasheet Details
| Part number | 2SC3152 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.49 KB |
| Description | NPN Transistor |
| Download | 2SC3152 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3152 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.49 KB |
| Description | NPN Transistor |
| Download | 2SC3152 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3152 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3152 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3152 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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2SC3152 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3150 | NPN Transistor |
| 2SC3151 | NPN Transistor |
| 2SC3153 | NPN Transistor |
| 2SC3156 | NPN Transistor |
| 2SC3157 | NPN Transistor |
| 2SC3158 | NPN Transistor |
| 2SC3159 | NPN Transistor |
| 2SC3110 | Silicon Power Transistor |
| 2SC3144 | NPN Transistor |
| 2SC3146 | NPN Transistor |