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2SC3540 - NPN Transistor

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Description

Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 3A Complement to Type 2SA1388 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA

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Datasheet Details

Part number 2SC3540
Manufacturer INCHANGE
File Size 197.72 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 3A ·Complement to Type 2SA1388 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 25 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3540 isc website：www.iscsemi.
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