Datasheet4U Logo Datasheet4U.com

2SC3551 - NPN Transistor

📥 Download Datasheet

Preview of 2SC3551 PDF
datasheet Preview Page 2

Datasheet Details

Part number 2SC3551
Manufacturer INCHANGE
File Size 188.05 KB
Description NPN Transistor
Datasheet download datasheet 2SC3551-INCHANGE.pdf

2SC3551 Product details

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-

📁 2SC3551 Similar Datasheet

  • 2SC3550 - Power Transistor (Inchange Semiconductor)
  • 2SC3552 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3553 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SC3554 - NPN Silicon Transistor (NEC)
  • 2SC3557 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3559 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3500 - Silicon Power Transistor (ETC)
  • 2SC3501 - Silicon Power Transistor (ETC)
Other Datasheets by INCHANGE
Published: |