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2SC3857 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) Good Linearity of hFE Complement to Type 2SA1493 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1493 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3857 isc website：www.iscsemi.
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