Datasheet Details
| Part number | 2SC3857 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.03 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3857-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3857 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.03 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3857-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1493 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3857 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3857 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3857 | Silicon NPN Transistor | Sanken electric |
 |
2SC3857 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3850 | NPN Transistor |
| 2SC3851 | NPN Transistor |
| 2SC3851A | NPN Transistor |
| 2SC3852 | NPN Transistor |
| 2SC3853 | NPN Transistor |
| 2SC3854 | NPN Transistor |
| 2SC3855 | NPN Transistor |
| 2SC3856 | NPN Transistor |
| 2SC3858 | NPN Transistor |
| 2SC3821 | NPN Transistor |