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2SC3857 Datasheet Preview

2SC3857 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 200V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1493
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
5
A
150
W
150
Tstg
Storage Temperature Range
-55~150
2SC3857
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SC3857 Datasheet Preview

2SC3857 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
2SC3857
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
200
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
3.0
V
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
100 μA
hFE
DC Current Gain
IC= 5A; VCE= 4V
50
180
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
250
pF
fT
Current-Gain—Bandwidth Product
IE= -0.5A; VCE= 12V
20
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
0.3
μs
IC= 5A, RL= 12Ω, IB1= -IB2= 0.5A,
VCC= 60V
2.4
μs
0.4
μs
hFE Classifications
O
P
Y
50-100 70-140 90-180
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SC3857
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
PDF Download

2SC3857 Datasheet PDF





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