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2SC4230 - Silicon NPN Power Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) Fast Switching speed Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power suppli

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4230 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current-Continuous 1 A IBM Base Current-Peak PT Total Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃
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