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2SC4574 Datasheet To-220f NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 1.5A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications ·Hammer driver,pulse motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 7 A IB Base Current-Continuous Collector Power Dissipation PC @ TC=25℃ 0.7 A 30 W TJ Junction Temperature Tstg Storage Temperature Range 150 ℃ -55~150 ℃ 2SC4574 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;

IB= 6mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A;

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Similar Datasheet

Brand Logo Part Number Description Manufacturer
Inchange Semiconductor Logo 2SC4574 TO-220Fa Silicon NPN Power Transistor Inchange Semiconductor

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