2SC4589 Overview
·High Breakdown Voltage- : RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;.
2SC4589 Details
| Part number | 2SC4589 |
|---|---|
| Datasheet | 2SC4589-INCHANGE.pdf |
| File Size | 185.15 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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