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2SC4690 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 7A Complement to Type 2SA1805 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.