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isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Switching regulators ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
Base Current-Continuous
3
A
IBM
Base Current-Peak
PT
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
6
A
45
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
2SC4834 Datasheet
