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2SC4849 - NPN Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable ope

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4849 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and general purpose applications.