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2SC4878 - NPN Transistor

Description

High Breakdown Voltage High Switching Speed Built in damper diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Very high-definition CRT display horizontal deflection output applications ABSOLUTE

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Datasheet Details

Part number 2SC4878
Manufacturer INCHANGE
File Size 184.26 KB
Description NPN Transistor
Datasheet download datasheet 2SC4878 Datasheet
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4878 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Built in damper diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 5.0 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
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