2SC4953 - NPN Transistor

Inchange Semiconductor

General Description

Silicon NPN triple diffusion planar type High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high breakdown voltage high speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY

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Datasheet Details

Part number	2SC4953
Manufacturer	Inchange Semiconductor
File Size	179.35 KB
Description	NPN Transistor
Datasheet	2SC4953 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4953 DESCRIPTION ·Silicon NPN triple diffusion planar type ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high breakdown voltage high speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-peak 6 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 1.2 A 30 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.