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2SC5065 - NPN Transistor

General Description

NF = 1.1 dB TYP., ︱S21e︱2= 12 dB TYP.

100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for VHF~UHF band low noise amplifier applications.

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5065 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., ︱S21e︱2= 12 dB TYP. @VCE = 5 V, f = 1.0 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 30 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 15 mA 0.1 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website:www.iscsemi.