Datasheet4U Logo Datasheet4U.com

2SC5171 - Silicon NPN Power Transistor

Description

High Transition Frenquency : fT=200MHz(Typ.) Complementary to 2SA1930 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMU

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC5171 NPN TRANSISTOR Toshiba Semiconductor
2SC5171 Silicon NPN transistor BLUE ROCKET ELECTRONICS
2SC5171 NPN Transistor JCET
2SC5171I Silicon NPN transistor BLUE ROCKET ELECTRONICS
2SC5171S Silicon NPN transistor BLUE ROCKET ELECTRONICS

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC5174 NPN Transistor
2SC5100 NPN Transistor
2SC5101 NPN Transistor
2SC5103 NPN Transistor
2SC5124 NPN Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5171 DESCRIPTION ·High Transition Frenquency : fT=200MHz(Typ.) ·Complementary to 2SA1930 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
Published: |