Datasheet Details
| Part number | 2SC5248 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.30 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2SC5248 Datasheet
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| Part number | 2SC5248 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.30 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2SC5248 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1964 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
isc Silicon NPN Power Transistor 2SC5248.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5248 | High Voltage Switching Transistor | Rohm |
| Part Number | Description |
|---|---|
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