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2SC5404 - NPN Transistor

General Description

High Breakdown Voltage- ：VCBO= 1500V (Min) High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal output applications for med

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- ：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal output applications for medium resolution display & color TV. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 9 A ICM Collector Current- Continuous 18 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4.