High Breakdown Voltage
High Switching Speed
Low Saturation Voltage
Wide area of safe operation
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Character display horizontal deflection output
ABS
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5552
DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Character display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1700
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
16
A
ICM
Collector Current- Continuous
30
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
8
A
65
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.
2SC5552 Datasheet
