2SC5696 Overview
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=400mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=7.2A; IB= 1.8A VBE(sat) Base-Emitter Saturation Voltage IC=7.2A;.
| Part number | 2SC5696 |
|---|---|
| Datasheet | 2SC5696-INCHANGE.pdf |
| File Size | 184.78 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=400mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=7.2A; IB= 1.8A VBE(sat) Base-Emitter Saturation Voltage IC=7.2A;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5696 | NPN Triple Diffused Planar Silicon Transistor | Sanyo |