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2SC5696 - NPN Transistor

General Description

High speed switching Built-in damper diode type 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for display horizontal deflection output Switching regulator and general purpose ABSOLUTE MAXIMUM

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5696 DESCRIPTION ·High speed switching ·Built-in damper diode type ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for display horizontal deflection output Switching regulator and general purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 85 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.