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2SC5993 - NPN Transistor

General Description

Good Linearity of hFE High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) Complement to Type 2SA2140 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplification For TV VM cir

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5993 DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SA2140 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplification ·For TV VM circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 3.0 A 2.0 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.