2SC5993 Overview
·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 180 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;.
| Part number | 2SC5993 |
|---|---|
| Datasheet | 2SC5993-INCHANGE.pdf |
| File Size | 176.88 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 180 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SC5993 | Silicon NPN Transistor | Panasonic Semiconductor |