Datasheet Details
| Part number | 2SC789 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.79 KB |
| Description | NPN Transistor |
| Download | 2SC789 Download (PDF) |
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| Part number | 2SC789 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.79 KB |
| Description | NPN Transistor |
| Download | 2SC789 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage- : VCE(sat)= 1.5(V)(Max)@ IC= 3A ·DC Current Gain- : hFE= 40-240 @ IC= 0.5A ·Complement to Type 2SA489 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC789 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC789 | SILICON POWER TRANSISTOR | SavantIC |
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