Datasheet Details
| Part number | 2SC937 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.67 KB |
| Description | NPN Transistor |
| Download | 2SC937 Download (PDF) |
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| Part number | 2SC937 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.67 KB |
| Description | NPN Transistor |
| Download | 2SC937 Download (PDF) |
|
|
|
·High Breakdown Voltage- : VCBO= 1200V(Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 6 A 22 W 125 ℃ Tstg Storage Temperature Range -45~125 ℃ 2SC937 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC937 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | 2SC937 | Silicon NPN Triple Diffused Type Transistor | ETC |
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