Datasheet Details
| Part number | 2SC940 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.17 KB |
| Description | NPN Transistor |
| Download | 2SC940 Download (PDF) |
|
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| Part number | 2SC940 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.17 KB |
| Description | NPN Transistor |
| Download | 2SC940 Download (PDF) |
|
|
|
·High Breakdown Voltage- : VCEO= 90V(Min) ·Wide Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal deflection output applications.
·Suitable for horizontal output applications in 12~24 inch B/W TV, and switching applications of 5A class.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCES Collector-Emitter Voltage 200 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 7.5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 15 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC940 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC940 | SILICON POWER TRANSISTOR | SavantIC |
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