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2SD1163A Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Collector Current: IC= 7A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IC(surge) Collector Current-Surge PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1163A isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;

RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;

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