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2SD1163A - NPN Transistor

Description

Collector Current: IC= 7A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for TV horizontal deflection applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IC(surge) Collector Current-Surge PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1163A isc website：www.iscsemi.
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