2SD1168
2SD1168 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Breakdown Voltage-
: VCBO= 1500V (Min)
- High Switching Speed
- Wide Area of Safe Operation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCER
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Pulse
Collector Power Dissipation @ TC TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-65~150
℃
2SD1168 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS...
