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2SD1168 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for switching regulator applications.

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Datasheet Details

Part number 2SD1168
Manufacturer INCHANGE
File Size 203.22 KB
Description NPN Transistor
Datasheet download datasheet 2SD1168 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCER Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC TC=25℃ TJ Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD1168 isc website：www.iscsemi.
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