2SD1204 Overview
1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1204 MIN TYP MAX UNIT VBCEO(SUS) Collector-Emitter Sustaining Voltage I = CB B 50mA; I = BB B 0 400 V VBCE(sat)-1 Collector-Emitter Saturation Voltage I = CB B 8 A; I = BB B 100mA 1.6 V VBCE(sat)-2 Collector-Emitter Saturation Voltage I = CB B 10.