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2SD1445 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

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General Description

·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 10A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V (Min) ·Fast Switching Speed ·Complement to Type 2SB948 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1445 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;

IB= 0.33A VBE(sat) Base-Emitter Saturation Voltage IC= 10A;

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1445.

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