Datasheet Details
| Part number | 2SD1446 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.33 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1446 Datasheet
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| Part number | 2SD1446 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.33 KB |
| Description | NPN Transistor |
| Datasheet |
2SD1446 Datasheet
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) · Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 500(Min) @ IC= 2A, VCE= 2V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplification applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1446 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1446 | Silicon NPN Transistor | Panasonic Semiconductor |
 |
2SD1446 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD144 | NPN Transistor |
| 2SD1441 | NPN Transistor |
| 2SD1444 | NPN Transistor |
| 2SD1445 | NPN Transistor |
| 2SD1400 | NPN Transistor |
| 2SD1402 | NPN Transistor |
| 2SD1403 | NPN Transistor |
| 2SD1404 | Silicon NPN Power Transistor |
| 2SD1405 | NPN Transistor |
| 2SD1406 | NPN Transistor |