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2SD1451 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 1.5 A 50 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1451 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA;

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1451.