Datasheet Details
| Part number | 2SD1466 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.12 KB |
| Description | NPN Transistor |
| Download | 2SD1466 Download (PDF) |
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| Part number | 2SD1466 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.12 KB |
| Description | NPN Transistor |
| Download | 2SD1466 Download (PDF) |
|
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) · Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 8A ·High DC Current Gain : hFE= 200(Min) @ IC= 15A, VCE= 3V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplification applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1466 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 20mA ;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part Number | Description |
|---|---|
| 2SD1400 | NPN Transistor |
| 2SD1402 | NPN Transistor |
| 2SD1403 | NPN Transistor |
| 2SD1404 | Silicon NPN Power Transistor |
| 2SD1405 | NPN Transistor |
| 2SD1406 | NPN Transistor |
| 2SD1407 | NPN Transistor |
| 2SD1408 | NPN Transistor |
| 2SD1409 | NPN Transistor |
| 2SD1409A | NPN Transistor |