2SD1466 Description
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) · Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 8A ·High DC Current Gain.
2SD1466 is NPN Transistor manufactured by Inchange Semiconductor .
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) · Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 8A ·High DC Current Gain.