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2SD1481 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

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General Description

·On-chip C-to-B Zener diode for surge voltage absorption ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A ·High DC Current Gain : hFE= 2000(Min) @IC= 1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency amplifiers and low speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage VEBO IC Emitter-Base Voltage Collector Current-Continuous ICP Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50-70 V 7 V 2 A 4 A 0.2 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1481 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)* Collector-Emitter Saturation Voltage IC= 1A, IB= 1mA VBE(sat)* Base-Emitter Saturation Voltage IC= 1A, IB= 1mA ICBO Collector Cutoff Current VCB= 40V, IE= 0 hFE-1* DC Current Gain IC= 1A;

VCE= 2V hFE-2* DC Current Gain *:Pulse test PW≤350us,duty cycle≤2% Switching Times ton Turn-on Time ts Storage Time tf Fall Time IC= 3A;

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.

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