Datasheet Details
| Part number | 2SD1492 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.49 KB |
| Description | NPN Transistor |
| Download | 2SD1492 Download (PDF) |
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| Part number | 2SD1492 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.49 KB |
| Description | NPN Transistor |
| Download | 2SD1492 Download (PDF) |
|
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 3 A 50 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1492 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
RBE= ∞ MIN TYP.
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1492.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1492 | SILICON POWER TRANSISTOR | SavantIC |
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