Datasheet4U Logo Datasheet4U.com

2SD1492 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 3 A 50 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1492 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;

RBE= ∞ MIN TYP.

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1492.