Datasheet Details
| Part number | 2SD1503 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.88 KB |
| Description | NPN Transistor |
| Download | 2SD1503 Download (PDF) |
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| Part number | 2SD1503 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.88 KB |
| Description | NPN Transistor |
| Download | 2SD1503 Download (PDF) |
|
|
|
· High Collector-Base Voltage - : VCBO= 900V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 6 A 50 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor isc Product Specification 2SD1503 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;
isc Silicon NPN Power Transistor isc Product Specification 2SD1503.
| Part Number | Description |
|---|---|
| 2SD1505 | NPN Transistor |
| 2SD1506 | NPN Transistor |
| 2SD1510 | NPN Transistor |
| 2SD1514 | NPN Transistor |
| 2SD1515 | NPN Transistor |
| 2SD1522 | NPN Transistor |
| 2SD1523 | NPN Transistor |
| 2SD1524 | NPN Transistor |
| 2SD1532 | NPN Transistor |
| 2SD1535 | NPN Transistor |