Datasheet Details
| Part number | 2SD1510 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.96 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1510 Datasheet
|
|
|
| Part number | 2SD1510 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.96 KB |
| Description | NPN Transistor |
| Datasheet |
2SD1510 Datasheet
|
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1510 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part Number | Description |
|---|---|
| 2SD1514 | NPN Transistor |
| 2SD1515 | NPN Transistor |
| 2SD1503 | NPN Transistor |
| 2SD1505 | NPN Transistor |
| 2SD1506 | NPN Transistor |
| 2SD1522 | NPN Transistor |
| 2SD1523 | NPN Transistor |
| 2SD1524 | NPN Transistor |
| 2SD1532 | NPN Transistor |
| 2SD1535 | NPN Transistor |