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2SD1514 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

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General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @ IC= 10A, VCE= 3V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and high current switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1514 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ,IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A , IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A , IB= 20mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6A , IB= 10mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 12A , IB= 20mA ICBO Collector Cutoff current VCB= 100V, IE= 0 IEBO Emitter Cutoff Current VEB= 7V;

IC= 0 hFE-1 DC Current Gain IC= 5A ;

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1514.

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