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2SD1522 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

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General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) ·High DC Current Gain : hFE= 500(Min) @ IC= 5A, VCE= 3V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 20 A 3 W 100 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1522 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 20mA ,IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A, IB= 8mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A, IB= 8mA 2.0 V ICBO Collector Cutoff current VCB= 500V, IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V;

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.

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