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2SD1523 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) ·High DC Current Gain : hFE= 500(Min) @ IC= 8A, VCE= 3V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current Collector Power Dissipation PC @Tc=25℃ Tj Junction Temperature 1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1523 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 20mA ,IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A, IB= 16mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A, IB= 24mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8A, IB= 16mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 12A, IB= 24mA ICBO Collector Cutoff current VCB= 450V, IE= 0 IEBO Emitter Cutoff Current VEB= 7V;

IC= 0 hFE DC Current Gain IC= 8A;

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.