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2SD1532 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 4V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous ICM Collector Current-Peak 4 A 8 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 120 mA 30 W 150 ℃ -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1532 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA ,IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A ,IB= 12mA VBE(on) Base-Emitter On Voltage IC= 3.0A ;

VCE= 3V ICBO Collector Cutoff Current VCB= 120V, IE= 0 ICEO Collector Cutoff Current VCE= 120V, IB= 0 IEBO Emitter Cutoff Current VEB= 5V;

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.