Datasheet Details
| Part number | 2SD1542 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.37 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1542 Datasheet
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| Part number | 2SD1542 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.37 KB |
| Description | NPN Transistor |
| Datasheet |
2SD1542 Datasheet
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 1.5 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1542 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1542.
| Part Number | Description |
|---|---|
| 2SD1540 | NPN Transistor |
| 2SD1541 | NPN Transistor |
| 2SD1545 | NPN Transistor |
| 2SD1546 | NPN Transistor |
| 2SD1547 | NPN Transistor |
| 2SD1548 | NPN Transistor |
| 2SD1549 | NPN Transistor |
| 2SD1503 | NPN Transistor |
| 2SD1505 | NPN Transistor |
| 2SD1506 | NPN Transistor |