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2SD1549 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage 1000 V 800 V 5 V IC Collector Current- Continuous ICM Collector Current-Peak IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 8 A 2.5 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor isc Product Specification 2SD1549 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;

Overview

isc Silicon NPN Power Transistor isc Product Specification 2SD1549.