Datasheet Details
| Part number | 2SD1564 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.53 KB |
| Description | NPN Transistor |
| Download | 2SD1564 Download (PDF) |
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| Part number | 2SD1564 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.53 KB |
| Description | NPN Transistor |
| Download | 2SD1564 Download (PDF) |
|
|
|
·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @IC= 2A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50-70 V 7 V 5 A 10 A 0.5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1564 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A, IB= 2mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A, IB= 2mA ICBO Collector Cutoff Current VCB= 40V, IE= 0 MIN TYP.
MAX UNIT 50 V 1.5 V 2.0 V 1 uA hFE-1 DC Current Gain hFE-2 DC Current Gain Switching Times ton Turn-on Time ts Storage Time tf Fall Time IC= 2A;
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1564.
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| 2SD1505 | NPN Transistor |
| 2SD1506 | NPN Transistor |
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