Datasheet4U Logo Datasheet4U.com

2SD1565 - NPN Transistor

📥 Download Datasheet

Preview of 2SD1565 PDF
datasheet Preview Page 2

Datasheet Details

Part number 2SD1565
Manufacturer INCHANGE
File Size 206.66 KB
Description NPN Transistor
Datasheet download datasheet 2SD1565-INCHANGE.pdf

2SD1565 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and low speed switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC C

📁 2SD1565 Similar Datasheet

  • 2SD1562A - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1500 - Power Transistor (Inchange Semiconductor)
  • 2SD1504 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1505 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1506 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1507M - NPN Silicon Transistor (Rohm)
  • 2SD1508 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SD1509 - Silicon NPN Transistor (Toshiba Semiconductor)
Other Datasheets by INCHANGE
Published: |