Datasheet Details
| Part number | 2SD1566 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.98 KB |
| Description | NPN Transistor |
| Download | 2SD1566 Download (PDF) |
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| Part number | 2SD1566 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.98 KB |
| Description | NPN Transistor |
| Download | 2SD1566 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 10A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1566 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part Number | Description |
|---|---|
| 2SD1562 | NPN Transistor |
| 2SD1563 | NPN Transistor |
| 2SD1563A | NPN Transistor |
| 2SD1564 | NPN Transistor |
| 2SD1565 | NPN Transistor |
| 2SD1503 | NPN Transistor |
| 2SD1505 | NPN Transistor |
| 2SD1506 | NPN Transistor |
| 2SD1510 | NPN Transistor |
| 2SD1514 | NPN Transistor |