Datasheet Details
| Part number | 2SD1572 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.65 KB |
| Description | NPN Transistor |
| Download | 2SD1572 Download (PDF) |
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| Part number | 2SD1572 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.65 KB |
| Description | NPN Transistor |
| Download | 2SD1572 Download (PDF) |
|
|
|
· High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous 60 V 7 V 8 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 12 A 40 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1572 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 25mA, IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;
IC= 0 VCE(sat) -1 Collector-Emitter Saturation Voltage IC= 4A, IB= 8mA MIN TYP.
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
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