2SD1594 Overview
·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching industrial use. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1594 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)...
