Datasheet Details
| Part number | 2SD1599 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.61 KB |
| Description | NPN Transistor |
| Download | 2SD1599 Download (PDF) |
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| Part number | 2SD1599 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.61 KB |
| Description | NPN Transistor |
| Download | 2SD1599 Download (PDF) |
|
|
|
·High DC Current Gain- : hFE = 1000(Min)@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 80 V 80 V 5 V 4 A 8 A 40 W 2 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1599 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A ,IB= 12mA 2.0 V VBE(on) Base-Emitter On Voltage IC= 3.0A ;
VCE= 3V 2.5 V ICBO Collector Cutoff Current VCB= 80V, IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 80V, IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
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