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2SD1600 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

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General Description

·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current- Continuous Collector Power Dissipation PC @TC=25℃ Collector Power Dissipation @Ta=25℃ Tj Junction Temperature Tstg Storage Temperature Range 8 A 12 A 0.3 A 40 W 2 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1600 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;

IB= 16mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A, IB= 30mA VBE(on) Base-Emitter On Voltage IC= 4A;

VCE= 4V ICBO Collector Cutoff Current VCB= 100V, IE= 0 ICEO Collector Cutoff Current VCE= 100V, IB= 0 IEBO Emitter Cutoff Current VEB= 5V;

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.

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