Datasheet Details
| Part number | 2SD1607 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.15 KB |
| Description | NPN Transistor |
| Download | 2SD1607 Download (PDF) |
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| Part number | 2SD1607 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.15 KB |
| Description | NPN Transistor |
| Download | 2SD1607 Download (PDF) |
|
|
|
·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 0.5 A 40 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1607 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 10A ,IB= 40mA VBE(on) Base-Emitter On Voltage IC= 10A ;
VCE= 4V ICBO Collector Cutoff current VCB= 120V, IE= 0 ICEO IEBO hFE-1 hFE-2 Collector Cutoff current Emitter Cutoff Current DC Current Gain DC Current Gain VCE= 120V, IB= 0 VEB= 6V;
IC= 0 IC= 5A ;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
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