Datasheet Details
| Part number | 2SD1609 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 189.44 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1609-INCHANGE.pdf
|
| Part number | 2SD1609 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 189.44 KB |
| Description | NPN Transistor |
| Datasheet |
2SD1609-INCHANGE.pdf
|
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) Good Linearity of hFE 100% avalanche tested Complement to Type 2SB1109 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and high-voltage amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 160 UNIT V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltag
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