Datasheet Details
| Part number | 2SD1609 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.44 KB |
| Description | NPN Transistor |
| Download | 2SD1609 Download (PDF) |
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| Part number | 2SD1609 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.44 KB |
| Description | NPN Transistor |
| Download | 2SD1609 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Complement to Type 2SB1109 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency and high-voltage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 160 UNIT V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 12.5 W 1.25 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1609 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1609.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1609 | Silicon NPN Transistor | Hitachi Semiconductor |
 |
2SD1609 | NPN TRANSISTOR | UTC |
| Part Number | Description |
|---|---|
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